G60N100BNTD NEW
₨450.00
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Features & Compatibility
The G60N100 (often listed as FGL60N100BNTD) is a high-performance
1000V1000 V
1000V
,
60A60 A
60A
N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power, high-frequency switching applications like inverters, motor drives, and welding equipment. It features a Trench NPT construction, providing low on-state voltage (
VCE(sat)=2.5Vcap V sub cap C cap E open paren s a t close paren end-sub equals 2.5 V
ππΆπΈ(π ππ‘)=2.5V
typ) and includes a fast-recovery anti-parallel diode.
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